FDMS3660AS - MOSFET

Product Overview

Fairchild Semiconductor

Part number	FDMS3660AS
Manufacturer	Fairchild Semiconductor
File Size	389.11 KB
Description	MOSFET
Datasheet	FDMS3660AS Datasheet
Additional preview pages of the FDMS3660AS datasheet.

This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

Q1: N-Channel.
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A.
Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel.
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A.
Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A.
Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
RoHS Compliant July 2013 Gen.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Jan 11, 2017 |