| Part Number | FDMS3672 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
UItraFET devices combine characteristics that enable benchmark
efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal fo.
* Max RDS(on) = 23 mW at VGS = 10 V, ID = 7.4 A * Max RDS(on) = 29 mW at VGS = 6 V, ID = 6.6 A * Typ Qg = 31 nC at VGS = 10 V * Low Miller Charge * Optimized Efficiency at High Frequencies * This Device is Pb *Free, Halide Free and RoHS Compliant Applications * DC *DC Conversion ABSOLUTE MAXIMUM RATI. |
FDMS3672 Datasheet and Specifications PDF
The FDMS3672 is a N-Channel MOSFET.
| Part Number | FDMS3672 Datasheet |
|---|---|
| Description | N-Channel UltraFET Trench MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
Max rDS(on) = 23mΩ at VGS = 10V, ID = 7.4A Max rDS(on) = 29mΩ at VGS = 6V, ID = 6.6A Typ Qg = 31nC at VGS = 10V Low Miller Charge Optimized efficiency at high frequencies RoHS Compliant
t.
General Description
* Max rDS(on) = 23mΩ at VGS = 10V, ID = 7.4A * Max rDS(on) = 29mΩ at VGS = 6V, ID = 6.6A * Typ Qg = 31nC at VGS = 10V * Low Miller Charge * Optimized efficiency at high frequencies * RoHS Compliant tm UItraFET devices combine characteristics that enable benchmark efficiency in . |