Datasheet Details
| Part number | FDMS3672 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 280.57 KB |
| Description | N-Channel UltraFET Trench MOSFET |
| Download | FDMS3672 Download (PDF) |
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Overview: FDMS3672 N-Channel UltraFET Trench MOSFET February 2007 FDMS3672 N-Channel UltraFET Trench MOSFET 100V, 22A,.
| Part number | FDMS3672 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 280.57 KB |
| Description | N-Channel UltraFET Trench MOSFET |
| Download | FDMS3672 Download (PDF) |
|
|
|
Max rDS(on) = 23mΩ at VGS = 10V, ID = 7.4A Max rDS(on) = 29mΩ at VGS = 6V, ID = 6.6A Typ Qg = 31nC at VGS = 10V Low Miller Charge Optimized efficiency at high frequencies RoHS Compliant tm UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Application DC - DC Conversion Pin 1 S S S G D D www.DataSheet4U.com 5 6 7 8 4 G 3 S 2 S 1 S D D D D D D Power (Bottom view) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 100 ±20 22 41 7.4 30 78 2.5 -55 to +150 W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.6 50 °C/W Package Marking and Ordering Information Device Marking FDMS3672 Device FDMS3672 Package Power 56 Reel Size 13’’ Tape Width 12mm Quantity 3000 units ©2007 Fairchild Semiconductor Corporation FDMS3672 Rev.C 1 www.fairchildsemi.com FDMS3672 N-Channel UltraFET Trench MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 80V, VGS = 0V TJ = 55°C VGS = ±20V, VDS = 0V
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FDMS3672 | N-Channel MOSFET | ON Semiconductor |
| Part Number | Description |
|---|---|
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