FDMS3672 Overview
Max rDS(on) = 23mΩ at VGS = 10V, ID = 7.4A Max rDS(on) = 29mΩ at VGS = 6V, ID = 6.6A Typ Qg = 31nC at VGS = 10V Low Miller Charge Optimized efficiency at high frequencies RoHS pliant tm UItraFET devices bine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to...
FDMS3672 Key Features
- Max rDS(on) = 23mΩ at VGS = 10V, ID = 7.4A
- Max rDS(on) = 29mΩ at VGS = 6V, ID = 6.6A
- Typ Qg = 31nC at VGS = 10V
- Low Miller Charge
- Optimized efficiency at high frequencies
- RoHS pliant
