FDMS3672 Datasheet | Fairchild Semiconductor

FDMS3672 N-Channel UltraFET Trench MOSFET February 2007 FDMS3672 N-Channel UltraFET Trench MOSFET 100V, 22A, 23mΩ Features General Description - Max rDS(on) = 23mΩ at VGS = 10V, ID = 7.4A - Max rDS(on) = 29mΩ at VGS = 6V, ID = 6.6A - Typ Qg = 31nC at VGS = 10V - Low Miller Charge - Optimized efficiency at high frequencies - RoHS pliant tm UItraFET devices bine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Application - DC - DC Conversion Pin 1 .. 5 6 7 8 4 G 3 S 2 S 1...