Datasheet Summary
MOSFET
- N-Channel, UltraFET Trench
100 V, 22 A, 23 mW
General Description UItraFET devices bine characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Features
- Max RDS(on) = 23 mW at VGS = 10 V, ID = 7.4 A
- Max RDS(on) = 29 mW at VGS = 6 V, ID = 6.6 A
- Typ Qg = 31 nC at VGS = 10 V
- Low Miller Charge
- Optimized Efficiency at High Frequencies
- This Device is Pb- Free, Halide Free and RoHS pliant
Applications
- DC- DC...
