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FDMS3672 Datasheet N-Channel MOSFET

Manufacturer: onsemi

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General Description

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications.

Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Overview

MOSFET – N-Channel, UltraFET Trench 100 V, 22 A, 23 mW FDMS3672 General.

Key Features

  • Max RDS(on) = 23 mW at VGS = 10 V, ID = 7.4 A.
  • Max RDS(on) = 29 mW at VGS = 6 V, ID = 6.6 A.
  • Typ Qg = 31 nC at VGS = 10 V.
  • Low Miller Charge.
  • Optimized Efficiency at High Frequencies.
  • This Device is Pb.
  • Free, Halide Free and RoHS Compliant.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDMS3672 N-Channel UltraFET Trench MOSFET Fairchild Semiconductor

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