| Part Number | FDMS86200 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH® process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain .
* Shielded Gate MOSFET Technology * Max RDS(on) = 18 mW at VGS = 10 V, ID = 9.6 A * Max RDS(on) = 21 mW at VGS = 6 V, ID = 8.8 A * Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency * MSL1 Robust Package Design * 100% UIL Tested * RoHS Compliant Applications * DC *DC Convers. |
FDMS86200 Datasheet and Specifications PDF
The FDMS86200 is a N-Channel MOSFET.
| Part Number | FDMS86200 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switchi.
* Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A * Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A * Advanced Package and Silicon combination for low rDS(on) and high efficiency * MSL1 robust package design * 100% UIL tested * RoHS Compliant General Description This N-Channel MOSFET is produced using F. |