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FDMS86263P Datasheet

The FDMS86263P is a P-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberFDMS86263P
Manufactureronsemi
Overview This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switc.
* Max rDS(on) = 53 mW at VGS = −10 V, ID = −4.4 A
* Max rDS(on) = 64 mW at VGS = −6 V, ID = −4 A
* Very Low Rds−on in Mid−Voltage P−Channel Silicon Technology Optimized for Low Qg
* This Product is Optimised for Fast Switching Applications as Well as Load Switch Applications
* 100% Uil Tested
* This.
Part NumberFDMS86263P
DescriptionMOSFET
ManufacturerFairchild Semiconductor
Overview This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized . „ Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A „ Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A „ Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg „ This product is optimised for fast switching applications as well as load switch applications „ 100% UIL tested „ RoHS.