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FDMS86263P - MOSFET

General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology.

This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.

Active Clamp Switch Load Switch

Key Features

  • Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A.
  • Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A.
  • Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg.
  • This product is optimised for fast switching.

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📁 Similar Datasheet

Part Number Description Manufacturer
FDMS86263P P-Channel MOSFET ON Semiconductor

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS86263P P-Channel PowerTrench® MOSFET FDMS86263P P-Channel PowerTrench® MOSFET -150 V, -22 A, 53 mΩ Features „ Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A „ Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A „ Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg „ This product is optimised for fast switching applications as well as load switch applications „ 100% UIL tested „ RoHS Compliant October 2014 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.