FDMS86263P
FDMS86263P is MOSFET manufactured by Fairchild Semiconductor.
Features
- Max r DS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A
- Max r DS(on) = 64 mΩ at VGS = -6 V, ID = -4 A
- Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg
- This product is optimised for fast switching applications as well as load switch applications
- 100% UIL tested
- Ro HS pliant
October 2014
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.
Applications
- Active Clamp Switch
- Load Switch
Top Bottom
Pin 1
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current...
