FDMS86263P Description
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance. Applications Active Clamp Switch Load Switch Top Bottom Pin 1 SS D S S GS D SD D D D GD D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS...
FDMS86263P Key Features
- Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A
- Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A
- Very low Rds-on in Mid-Voltage P-Channel silicon technology
- This product is optimised for fast switching