| Part Number | FDMS9600S Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
Q1: N-Channel Max rDS(on) = 8.5m: at VGS = 10V, ID = 12A Max rDS(on) = 12.4m: at VGS = 4.5V, ID = 10A Q2: N-Channel Max rDS(on) = 5.5m: at VGS = 10V, ID = 16A Max rDS(on) = 7.0m: at VGS = 4.5.
General Description
Q1: N-Channel * Max rDS(on) = 8.5m: at VGS = 10V, ID = 12A * Max rDS(on) = 12.4m: at VGS = 4.5V, ID = 10A Q2: N-Channel * Max rDS(on) = 5.5m: at VGS = 10V, ID = 16A * Max rDS(on) = 7.0m: at VGS = 4.5V, ID = 14A * Low Qg high side MOSFET * Low rDS(on) low side MOSFET * Thermally. |
FDMS9600S Datasheet and Specifications PDF
The FDMS9600S is a Dual N-Channel PowerTrench MOSFET.
| Part Number | FDMS9600S Datasheet |
|---|---|
| Description | Dual N-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
FDMS9600S
FDMS9600S Datasheet
Dual N-Channel 30V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0034 at VGS = 10 V 30
0.0043 at VGS = 4.5 V
ID (A) 60 55
Qg (Typ.) 17 nC
FE.
* Halogen-free According to IEC 61249-2-21 Definition * TrenchFET® Power MOSFET * 100 % UIS Tested * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * Set Top Box * Low Current DC/DC PHASE Top View Bottom View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Par. |