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FDMS9600S
FDMS9600S Datasheet
www.VBsemi.com
Dual N-Channel 30V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0034 at VGS = 10 V 30
0.0043 at VGS = 4.5 V
ID (A) 60 55
Qg (Typ.) 17 nC
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • 100 % UIS Tested • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Set Top Box • Low Current DC/DC
PHASE
Top View
Bottom View
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current Single Pulse Avalanche Energy
TC = 25 °C TA = 25 °C
L = 0.
FDMS9600S Datasheet
