FDMS9600S Datasheet | Fairchild Semiconductor

FDMS9600S Dual N-Channel PowerTrench® MOSFET Dual N-Channel PowerTrench® MOSFET Q1: 30V, 32A, 8.5m: Q2: 30V, 30A, 5.5m: May 2014 Features General Description Q1: N-Channel - Max rDS(on) = 8.5m: at VGS = 10V, ID = 12A - Max rDS(on) = 12.4m: at VGS = 4.5V, ID = 10A Q2: N-Channel - Max rDS(on) = 5.5m: at VGS = 10V, ID = 16A - Max rDS(on) = 7.0m: at VGS = 4.5V, ID = 14A - Low Qg high side MOSFET - Low rDS(on) low side MOSFET - Thermally efficient dual Power 56 package This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization. The low switching loss...