FDMT80060DC Datasheet
FDMT80060DC Datasheet (onsemi)
onsemi
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while main.
* Max rDS(on) = 1.1 mW at VGS = 10 V, ID = 43 A
* Max rDS(on) = 1.3 mW at VGS = 8 V, ID = 37 A
* Advanced Package and Silicon Combination for Low rDS(on)
and High Efficiency
* Next Generation Enhanced Body Diode Technology,
Engineered for Soft Recovery
* Low Profile 8 x 8 mm MLP Package
* MSL1 Robus.
FDMT80060DC Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 43 A Max rDS(on) = 1.3 mΩ at VGS = 8 V, ID = 37 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhance.
General Description
* Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 43 A
* Max rDS(on) = 1.3 mΩ at VGS = 8 V, ID = 37 A
* Advanced Package and Silicon combination for low rDS(on)
and high efficiency
* Next generation enhanced body diode technology, engineered for soft recovery
* Low profile 8x8mm MLP p.