Datasheet4U Logo Datasheet4U.com

FDMT80060DC - MOSFET

General Description

Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 43 A Max rDS(on) = 1.3 mΩ at VGS = 8 V, ID = 37 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery Low

Key Features

  • General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMT80060DC N-Channel Power MOSFET ON Semiconductor
FDMT800100DC N-Channel MOSFET ON Semiconductor
FDMT800120DC N-Channel MOSFET ON Semiconductor
FDMT800150DC N-Channel MOSFET ON Semiconductor
FDMT800152DC N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDMT800100DC MOSFET
FDMT800120DC MOSFET
FDMT800150DC MOSFET
FDMT800152DC MOSFET
FDMT80080DC MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMT80060DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET August 2015 FDMT80060DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 60 V, 292 A, 1.1 mΩ Features General Description „ Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 43 A „ Max rDS(on) = 1.3 mΩ at VGS = 8 V, ID = 37 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ Low profile 8x8mm MLP package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.