FDMT80060DC - N-Channel Power MOSFET

onsemi

General Description

This N

POWERTRENCH process.

to Ambient

Key Features

Max rDS(on) = 1.1 mW at VGS = 10 V, ID = 43 A.
Max rDS(on) = 1.3 mW at VGS = 8 V, ID = 37 A.
Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency.
Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery.
Low Profile 8 x 8 mm MLP Package.
MSL1 Robust Package Design.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and RoHS Compliant.

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FDMT80060DC n-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMT80060DC
Manufacturer	onsemi
File Size	520.45 KB
Description	N-Channel Power MOSFET
Datasheet	FDMT80060DC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH), DUAL COOL) 88 60 V, 292 A, 1.1 mW FDMT80060DC General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. Features • Max rDS(on) = 1.1 mW at VGS = 10 V, ID = 43 A • Max rDS(on) = 1.