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FDN337N Datasheet

The FDN337N is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberFDN337N
Manufactureronsemi
Overview SUPERSOTt−3 N−Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especia.
* 2.2 A, 30 V
* RDS(on) = 0.065 W @ VGS = 4.5 V
* RDS(on) = 0.082 W @ VGS = 2.5 V
* Industry Standard Outline SOT
*23 Surface Mount Package Using Proprietary SUPERSOT
*3 Design for Superior Thermal and Electrical Capabilities
* High Density Cell Design for Extremely Low RDS(on)
* Exceptional on
*Resist.
Part NumberFDN337N
DescriptionN-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview SuperSOT -3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is espe. 2.2 A, 30 V, RDS(ON) = 0.065 Ω @ VGS = 4.5 V RDS(ON) = 0.082 Ω @ VGS = 2.5 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance a.
Part NumberFDN337N
DescriptionN-Channel MOSFET
ManufacturerKexin Semiconductor
Overview SMD Type N-Channel MOSFET FDN337N (KDN337N) TraMnOsiSsFtoErsT Ƶ Features ƽ VDS (V) =30 V ƽ ID = 2.2 A ƽ RDS(ON) = 0.065 ȍ @ VGS = 4.5 V ƽ RDS(ON) = 0.082 ȍ @ VGS = 2.5 V D +0.2 2.8 -0.1 SOT-23-3 . ƽ VDS (V) =30 V ƽ ID = 2.2 A ƽ RDS(ON) = 0.065 ȍ @ VGS = 4.5 V ƽ RDS(ON) = 0.082 ȍ @ VGS = 2.5 V D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit : mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0..