Datasheet Summary
March 1998
FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
SuperSOT -3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook puters, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
2.2 A, 30 V, RDS(ON) = 0.065 Ω @ VGS = 4.5 V RDS(ON) = 0.082 Ω @ VGS =...
