Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- -1.3 A, -20 V. RDS(ON) = 0.20 Ω @ VGS = -4.5 V RDS(ON) = 0.27 Ω @ VGS= -2.5 V. Low gate charge (3.6 nC typical). High performance trench technology for extremely low RDS(ON). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D
D
6 33
S
SuperSOT -3
TM
G
G S
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD TJ,TSTG RθJA RθJC Parameter Drain-Source Voltage Gate.
FDN336P Datasheet
