Datasheet4U Logo Datasheet4U.com

FDN336P Datasheet Single P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: November 1998 FDN336P Single P-Channel 2.5V Specified PowerTrenchTM.

General Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Key Features

  • -1.3 A, -20 V. RDS(ON) = 0.20 Ω @ VGS = -4.5 V RDS(ON) = 0.27 Ω @ VGS= -2.5 V. Low gate charge (3.6 nC typical). High performance trench technology for extremely low RDS(ON). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D 6 33 S SuperSOT -3 TM G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG RθJA RθJC Parameter Drain-Source Voltage Gate.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FDN336P P-Channel MOSFET ON Semiconductor
Kexin Logo FDN336P P-Channel Enhancement MOSFET Kexin

More Datasheets from Fairchild (now onsemi)

Part Number Description
FDN335N N-Channel MOSFET
FDN337N N-Channel MOSFET
FDN338P P-Channel MOSFET
FDN339AN N-Channel MOSFET
FDN302P P-Channel MOSFET
FDN304P P-Channel MOSFET
FDN304PZ P-Channel MOSFET
FDN306P P-Channel MOSFET
FDN308P P-Channel MOSFET
FDN327N N-Channel MOSFET

FDN336P Distributor