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FDN338P - P-Channel MOSFET

Datasheet Summary

Description

This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management applications.

Battery management Load switch Battery protection

Features

  • 1.6 A,.
  • 20 V. RDS(ON) = 115 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 155 mΩ @ VGS =.
  • 2.5 V.
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint DD S SuperSOTTM-3 G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage.

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Datasheet preview – FDN338P

Datasheet Details

Part number FDN338P
Manufacturer Fairchild Semiconductor
File Size 321.71 KB
Description P-Channel MOSFET
Datasheet download datasheet FDN338P Datasheet
Additional preview pages of the FDN338P datasheet.

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Full PDF Text Transcription

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FDN338P FDN338P P-Channel 2.5V Specified PowerTrench® MOSFET November 2013 General Description This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch • Battery protection Features • –1.6 A, –20 V. RDS(ON) = 115 mΩ @ VGS = –4.5 V RDS(ON) = 155 mΩ @ VGS = –2.
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