FDN338P
FDN338P is P-Channel MOSFET manufactured by Fairchild Semiconductor.
P-Channel 2.5V Specified Power Trench® MOSFET
November 2013
General Description
This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications.
Applications
- Battery management
- Load switch
- Battery protection
Features
- - 1.6 A,
- 20 V. RDS(ON) = 115 mΩ @ VGS =
- 4.5 V RDS(ON) = 155 mΩ @ VGS =
- 2.5 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- Super SOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint
Super...
