Datasheet Details
| Part number | FDN335N |
|---|---|
| Manufacturer | onsemi |
| File Size | 288.03 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDN335N Datasheet
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General Description
This N
Channel 2.5 V specified MOSFET is produced using
onsemi advanced POWERTRENCH® process that has been especially tailored to minimize the on
state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- 1.7 A, 20 V.
- RDS(ON) = 0.07 W @ VGS = 4.5 V.
- RDS(ON) = 0.1 W @ VGS = 2.5 V.
- Low Gate Charge (3.5 nC typical).
- High Performance Trench Technology for Extremely Low RDS(ON).
- High Power and Current Handling Capability.
- This Device is Pb.
- Free and is RoHS Compliant.