Datasheet Summary
MOSFET
- N-Channel, 2.5 V Specified, POWERTRENCH)
20 V, 1.7 A, 100 mW
General Description This N- Channel 2.5 V specified MOSFET is produced using onsemi advanced POWERTRENCH® process that has been especially tailored to minimize the on- state resistance and yet maintain low gate charge for superior switching performance.
Features
- 1.7 A, 20 V
- RDS(ON) = 0.07 W @ VGS = 4.5 V
- RDS(ON) = 0.1 W @ VGS = 2.5 V
- Low Gate Charge (3.5 nC typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- This Device is Pb- Free and is RoHS pliant
Applications
- DC- DC Converter
- Load...
