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FDN336P - P-Channel Enhancement MOSFET

Key Features

  • ƽ VDS (V) =-20V ƽ RDS(ON) ˘ 130m¡ (VGS =-4.5V) ƽ RDS(ON) ˘ 190m¡ (VGS =-2.5V) G1 S2 3D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.1 0.38 -0.1 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current.
  • 1 Ta=25ć Ta=70ć Pulsed Drain Current.
  • 2 Power Dissipation.
  • 1 Ta=25ć Ta=7.

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SMD Type P-Channel Enhancement MOSFET FDN336P MOSFET Ƶ Features ƽ VDS (V) =-20V ƽ RDS(ON) ˘ 130m¡ (VGS =-4.5V) ƽ RDS(ON) ˘ 190m¡ (VGS =-2.5V) G1 S2 3D +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Gate 2.Source 3.Drain 0-0.1 +0.1 0.38 -0.1 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current *1 Ta=25ć Ta=70ć Pulsed Drain Current *2 Power Dissipation *1 Ta=25ć Ta=70ć Thermal Resistance.Junction- to-Ambient *1 Thermal Resistance.Junction- to-Ambient *3 Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg *1 Surface Mounted on FR4 Board, t İ 5 sec.