FDN339AN
FDN339AN is N-Channel MOSFET manufactured by Fairchild Semiconductor.
Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- 3 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V RDS(ON) = 0.050 Ω @ VGS = 2.5 V.
- -
- Low gate charge (7n C typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications
- DC/DC converter
- Load switch
Super SOT -3
TA = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, T stg Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
Parameter
Ratings
20 ±8
(Note 1a)
Units
V V A W °C
3 20 0.5 0.46 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
250 75
°C/W °C/W
Package Outlines and Ordering Information
Device...
