Datasheet Summary
MOSFET
- Single P-Channel POWERTRENCH)
2.5 V Specified
Description This P- Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC- DC conversion.
Features
- - 1.3 A,
- 20 V
- RDS(on) = 0.20 W @ VGS =
- 4.5 V
- RDS(on) = 0.27 W @ VGS =
- 2.5 V
- Low Gate Charge (3.6 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- SUPERSOTTM
- 3 Provides Low RDS(ON) and...
