FDN338P Description
This P−Channel 2.5 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications.
FDN338P Key Features
- 1.6 A, -20 V RDS(ON) = 115 mW @ VGS = -4.5 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- SUPERSOTt-3 Provides Low RDS(ON) and 30% Higher Power
- This is a Pb-Free and Halide Free Device