Datasheet Details
| Part number | FDN338P |
|---|---|
| Manufacturer | onsemi |
| File Size | 283.83 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 FDN338P Datasheet
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General Description
This P
low voltage POWERTRENCH process.
It has been optimized for battery power management applications.
Key Features
- 1.6 A,.
- 20 V RDS(ON) = 115 mW @ VGS =.
- 4.5 V RDS(ON) = 155 mW @ VGS =.
- 2.5 V.
- Fast Switching Speed.
- High Performance Trench Technology for Extremely Low RDS(ON).
- SUPERSOTt.
- 3 Provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT.
- 23 in the Same Footprint.
- This is a Pb.
- Free and Halide Free Device.