FDN338P Overview
Description
This P-Channel 2.5 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications.
Key Features
- 1.6 A, –20 V RDS(ON) = 115 mW @ VGS = –4.5 V RDS(ON) = 155 mW @ VGS = –2.5 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- SUPERSOTt-3 Provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT-23 in the Same Footprint
- This is a Pb-Free and Halide Free Device
