FDN339AN Description
This N−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
FDN339AN Key Features
- 3 A, 20 V
- RDS(on) = 0.035 W @ VGS = 4.5 V
- RDS(on) = 0.050 W @ VGS = 2.5 V
- Low Gate Charge (7 nC Typical)
- High Performance Trench technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability