FDN339AN
FDN339AN is N-Channel MOSFET manufactured by onsemi.
Description
This N- Channel 2.5 V specified MOSFET is produced using onsemi’s advanced Power Trench process that has been especially tailored to minimize the on- state resistance and yet maintain low gate charge for superior switching performance.
Features
- 3 A, 20 V
- RDS(on) = 0.035 W @ VGS = 4.5 V
- RDS(on) = 0.050 W @ VGS = 2.5 V
- Low Gate Charge (7 n C Typical)
- High Performance Trench technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
Typical Applications
- DC- DC Converter
- Load Switch
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
VDSS VGSS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
- Continuous (Note 1a)
- Pulsed
±8
A 3
Power Dissipation for Single
Operation
(Note 1a)
(Note 1b)
W 0.5
TJ, Tstg
Operating and Storage Junction Temperature Range
- 55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be...
