Datasheet Details
| Part number | FDN339AN |
|---|---|
| Manufacturer | onsemi |
| File Size | 264.90 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDN339AN Datasheet
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General Description
This N
Channel 2.5 V specified MOSFET is produced using
onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on
state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- 3 A, 20 V.
- RDS(on) = 0.035 W @ VGS = 4.5 V.
- RDS(on) = 0.050 W @ VGS = 2.5 V.
- Low Gate Charge (7 nC Typical).
- High Performance Trench technology for Extremely Low RDS(ON).
- High Power and Current Handling Capability Typical.