Datasheet Summary
Transistor
- N-Channel, Logic Level, Enhancement Mode Field Effect
General Description SUPERSOTt- 3 N- Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on- state resistance. These devices are particularly suited for low voltage applications in notebook puters, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in- line power loss are needed in a very small outline surface mount package.
Features
- 2.2 A, 30 V
- RDS(on) = 0.065 W @ VGS = 4.5 V
- RDS(on) = 0.082 W @ VGS = 2.5 V
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