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FDN337N Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: Transistor - N-Channel, Logic Level, Enhancement Mode Field Effect FDN337N.

General Description

SUPERSOTt−3 N−Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on−state resistance.

These devices are particularly suited for low voltage applications in notebook puters, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in−line power loss are needed in a very small outline surface mount package.

Key Features

  • 2.2 A, 30 V.
  • RDS(on) = 0.065 W @ VGS = 4.5 V.
  • RDS(on) = 0.082 W @ VGS = 2.5 V.
  • Industry Standard Outline SOT.
  • 23 Surface Mount Package Using Proprietary.

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