FDN337N Overview
SUPERSOTt−3 N−Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. These devices are particularly suited for low voltage applications in notebook puters, portable phones, PCMCIA cards, and other battery powered circuits where fast...
FDN337N Key Features
- 2.2 A, 30 V
- RDS(on) = 0.065 W @ VGS = 4.5 V
- RDS(on) = 0.082 W @ VGS = 2.5 V
- Industry Standard Outline SOT-23 Surface Mount Package Using
- High Density Cell Design for Extremely Low RDS(on)
- Exceptional on-Resistance and Maximum DC Current Capability
- This Device is Pb-Free and Halogen Free
