FDN337N - N-Channel MOSFET

onsemi

General Description

SUPERSOTt 3 N

field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance.

Key Features

2.2 A, 30 V.
RDS(on) = 0.065 W @ VGS = 4.5 V.
RDS(on) = 0.082 W @ VGS = 2.5 V.
Industry Standard Outline SOT.
23 Surface Mount Package Using Proprietary.

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FDN337N n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDN337N
Manufacturer	onsemi
File Size	278.62 KB
Description	N-Channel MOSFET
Datasheet	FDN337N Datasheet

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Transistor - N-Channel, Logic Level, Enhancement Mode Field Effect FDN337N General Description SUPERSOTt−3 N−Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in−line power loss are needed in a very small outline surface mount package. Features • 2.2 A, 30 V ♦ RDS(on) = 0.065 W @ VGS = 4.5 V ♦ RDS(on) = 0.082 W @ VGS = 2.