| Part Number | FDN338P Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Applications
• Battery management • Loa.
* *1.6 A, *20 V. RDS(ON) = 115 mΩ @ VGS = *4.5 V RDS(ON) = 155 mΩ @ VGS = *2.5 V * Fast switching speed * High performance trench technology for extremely low RDS(ON) * SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint DD S SuperSOTTM-3 . |
FDN338P Datasheet and Specifications PDF
The FDN338P is a P-Channel MOSFET.
Key Specifications
| Package | TO-236-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 1.22 mm |
| Width | 3.05 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDN338P Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | onsemi |
| Overview |
This P−Channel 2.5 V specified MOSFET uses onsemi’s advanced
low voltage POWERTRENCH process. It has been optimized for battery power management applications.
Features
• –1.6 A, –20 V RDS(ON) = 115 mW.
* *1.6 A, *20 V RDS(ON) = 115 mW @ VGS = *4.5 V RDS(ON) = 155 mW @ VGS = *2.5 V * Fast Switching Speed * High Performance Trench Technology for Extremely Low RDS(ON) * SUPERSOTt *3 Provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT *23 in the Same Footprint * This is a Pb *Free and . |