FDN358P Datasheet

The FDN358P is a P-Channel MOSFET.

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Part NumberFDN358P
Manufactureronsemi
Overview This P−Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for super.
*
*1.5 A,
*30 V
* RDS(ON) = 125 mW @ VGS =
*10 V
* RDS(ON) = 200 mW @ VGS =
*4.5 V
* Low Gate Charge (4 nC Typical)
* High Performance Trench Technology for Extremely Low RDS(ON)
* High Power Version of Industry Standard SOT
*23 Package. Identical Pin
*Out to SOT
*23 with 30% Higher Power Handling Capa.
Part NumberFDN358P
DescriptionP-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is esp. -1.5 A, -30 V, RDS(ON) = 0.125 Ω @ VGS = -10 V RDS(ON) = 0.20 Ω @ VGS = - 4.5 V. High power version of industry SOT-23 package: identical pin out to SOT-23; 30% higher power handling capability. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capa.