FDN358P
Overview
SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.
- 5 A, -30 V, RDS(ON) = 0.125 Ω @ VGS = -10 V RDS(ON) = 0.20 Ω @ VGS = - 4.5 V. High power version of industry SOT-23 package: identical pin out to SOT-23; 30% higher power handling capability. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 *
- 8 35 S G S SuperSOT -3 TM G
