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FDN359AN - N-Channel MOSFET

General Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Key Features

  • 2.7 A, 30 V. RDS(ON) = 0.046 Ω @ VGS = 10 V RDS(ON) = 0.060 Ω @ VGS = 4.5 V. Very fast switching. Low gate charge (5nC typical). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. SOT-23 SuperSOTTM -6 SuperSOTTM -8 SO-8 SOT-223 SOIC-16 D D 9A 35 S SuperSOT -3 TM G G S Absolute Maximum Ratings Symbol Parameter TA = 25oC unless other wise noted Ratings Units VDSS VGSS ID PD TJ,TSTG RθJA RθJC Drain-Source Vo.

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Other Datasheets by Fairchild (now onsemi)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features 2.7 A, 30 V. RDS(ON) = 0.046 Ω @ VGS = 10 V RDS(ON) = 0.060 Ω @ VGS = 4.5 V. Very fast switching. Low gate charge (5nC typical). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.