FDN357N Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: March 1998 FDN357N N-Channel Logic Level Enhancement Mode Field Effect.

Datasheet Details

Part number	FDN357N
Manufacturer	Fairchild (now onsemi)
File Size	84.64 KB
Description	N-Channel MOSFET
Datasheet	FDN357N_FairchildSemiconductor.pdf

General Description

SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Key Features

1.9 A, 30 V, RDS(ON) = 0.090 Ω @ VGS = 4.5 V RDS(ON) = 0.060 Ω @ VGS = 10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D 7 35 S SuperSOT -3 TM G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG RθJA RθJC Pa.

FDN357N Distributor

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