FDN352AP - PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDN352AP
Manufacturer	Fairchild Semiconductor
File Size	149.14 KB
Description	PowerTrench MOSFET
Datasheet	FDN352AP Datasheet
Additional preview pages of the FDN352AP datasheet.

Product details

Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Notebook computer power management D D www.DataSheet4U.com S G G S

Features

1.3 A,.
30V.
1.1 A,.
30V RDS(ON) = 180 mΩ @ VGS =.
10V RDS(ON) = 300 mΩ @ VGS =.
4.5V.
High performance trench technology for extremely low RDS(ON).
High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. General.

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Published: Jun 4, 2007 |