FDN352AP Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package....
FDN352AP Key Features
- 1.3 A, -30V -1.1 A, -30V RDS(ON) = 180 mΩ @ VGS = -10V RDS(ON) = 300 mΩ @ VGS = -4.5V
- High performance trench technology for extremely low RDS(ON)
- High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capab