FDN352AP Datasheet | Fairchild Semiconductor

FDN352AP Single P-Channel, Power Trench® MOSFET August 2005 FDN352AP Single P-Channel, Power Trench® MOSFET Features - - 1.3 A, - 30V - 1.1 A, - 30V RDS(ON) = 180 mΩ @ VGS = - 10V RDS(ON) = 300 mΩ @ VGS = - 4.5V - High performance trench technology for extremely low RDS(ON). - High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package. Applications - Notebook puter power management .. Super...