Description
This P
Channel Logic Level MOSFET is produced using onsemi
advanced POWERTRENCH process that has been especially tailored to minimize the on
state resistance and yet maintain low gate charge for superior switching performance.
Features
- 1.3 A,.
- 30 V RDS(ON) = 180 mW @ VGS =.
- 10 V.
- 1.1 A,.
- 30 V RDS(ON) = 300 mW @ VGS =.
- 4.5 V.
- High Performance Trench Technology for Extremely Low RDS(ON).
- High Power Version of Industry Standard SOT.
- 23 Package. Identical
Pin.
- out to SOT.
- 23 with 30% Higher Power Handling Capability.
- This Device is Pb.
- Free, Halide Free and is RoHS Compliant.
FDN352AP Datasheet
