FDN352AP Description
This P−Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss is needed in a very small outline surface mount package.
FDN352AP Key Features
- 1.3 A, -30 V RDS(ON) = 180 mW @ VGS = -10 V
- 1.1 A, -30 V RDS(ON) = 300 mW @ VGS = -4.5 V
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power Version of Industry Standard SOT-23 Package. Identical
- This Device is Pb-Free, Halide Free and is RoHS pliant