FDN352AP Datasheet | onsemi

DATA SHEET .onsemi. MOSFET - Single, P-Channel, POWERTRENCH) FDN352AP VDSS - 30 V RDS(ON) MAX 180 m W @ - 10 V 300 m W @ - 4.5 V ID MAX - 1.3 A - 1.1 A General Description This P- Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in- line power loss is needed in a very small outline surface mount package. Features - - 1.3 A, - 30 V RDS(ON) = 180 m W @ VGS = - 10 V - - 1.1 A, - 30 V RDS(ON) = 300 m W @ VGS = - 4.5 V - High Performance Trench Technology for Extremely Low RDS(ON) - High Power Version of Industry Standard SOT- 23 Package. Identical Pin- out to SOT- 23 with 30% Higher Power Handling Capability - This Device is Pb- Free, Halide Free and is Ro HS pliant Applications - Notebook puter Power...