FDN352AP - 30V P-Channel MOSFET

General Description

These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.

Key Features

1.3 A,.
30V.
1.1 A,.
30V RDS(ON) = 180 mΩ @ VGS =.
10V RDS(ON) = 300 mΩ @ VGS =.
4.5V.
High performance trench technology for extremely low RDS(ON).
High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.

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FDN352AP 30v p-channel mosfet by EVVOSEMI - Datasheet Preview

Datasheet Details

Part number	FDN352AP
Manufacturer	EVVOSEMI
File Size	660.58 KB
Description	30V P-Channel MOSFET
Datasheet	FDN352AP Datasheet

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FDN352AP General Description These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package. Features ■ –1.3 A, –30V –1.1 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High performance trench technology for extremely low RDS(ON). ■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. Applications ■ Notebook computer power management P-Channel 30 V (D-S) MOSFET SOT–23 1. GATE 2. SOURCE 3.