EVVOSEMI FDN352AP
30V P-Channel MOSFET
| Part No. | FDN352AP |
|---|---|
| Datasheet | FDN352AP Download |
| Manufacturer |  EVVOSEMI |
| Description | 30V P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.FEATURES
● –1.3 A, –30V –1.1 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V RDS(ON) = 300 mΩ @ VGS = –4.5V● High performance trench technology for extremely low RDS(ON).
● High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.
APPLICATIONS
● Notebook computer power management P-Channel 30 V (D-S) MOSFET SOT–23 1. GATE 2. SOURCE 3. DRAIN D G SABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case...
