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FDN352AP - -30V P-ChanneI MOSFET

General Description

These devices are well suited for low voltage and battery pow-ered applications where low in-line power loss is needed in a very small outline surface mount package.

2.

Key Features

  • VDS(V)=-30V ID(VGS=-10V)=-1.3A RDS(ON)(VGS=-10V)≤180mΩ RDS(ON)(VGS=-4.5V)≤300mΩ 4.Pinning information Pin Symbol.

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Datasheet Details

Part number FDN352AP
Manufacturer UMW
File Size 753.80 KB
Description -30V P-ChanneI MOSFET
Datasheet download datasheet FDN352AP Datasheet

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UMW FDN352AP -30V P-ChanneI MOSFET 1.Description These devices are well suited for low voltage and battery pow-ered applications where low in-line power loss is needed in a very small outline surface mount package. 3.Application Notebook computer power management 2.Features VDS(V)=-30V ID(VGS=-10V)=-1.3A RDS(ON)(VGS=-10V)≤180mΩ RDS(ON)(VGS=-4.5V)≤300mΩ 4.Pinning information Pin Symbol Description SOT-23 3 1 G GATE 2 S SOURCE 3 D DRAIN 1 2 D G S 5.