FDN352AP
FDN352AP is -30V P-ChanneI MOSFET manufactured by UMW.
UMW FDN352AP
-30V P-Channe I MOSFET
1.Description
These devices are well suited for low voltage and battery pow-ered applications where low in-line power loss is needed in a very small outline surface mount package.
3.Application
Notebook puter power management
2.Features
VDS(V)=-30V ID(VGS=-10V)=-1.3A RDS(ON)(VGS=-10V)≤180mΩ RDS(ON)(VGS=-4.5V)≤300mΩ
4.Pinning information
Pin
Symbol Description SOT-23
GATE
SOURCE
DRAIN
1 2
5.Maximum ratings (TA=25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous (Note 1a)
- Pulsed Maximum Power Dissipation(Note 1a)
(Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) Thermal Resistance, Junction-to-Case (Note 1)
Symbol VDSS VGSS ID
PD TJ, TSTG
RθJA RθJC
Value -30 ±25 -1.3 -10 0.5 0.46
-55 to 150
Units V V A
W °C
°C/W
°C/W
UTD Semiconductor Co.,Limited...
