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FDN352AP Datasheet P-channel MOSFET

Manufacturer: Kexin Semiconductor

Overview: SMD Type P-Channel MOSFET FDN352AP (KDN352AP) ■.

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-1.3 A (VGS =-10V).
  • RDS(ON) ＜ 180mΩ (VGS =-10V).
  • RDS(ON) ＜ 300mΩ (VGS =-4.5V) +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 D +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipa.

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