Kexin Electronics FDN352AP
P-Channel MOSFET
| Part No. | FDN352AP |
|---|---|
| Datasheet | FDN352AP Download |
| Manufacturer | Kexin Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) =-30V● ID =-1.3 A (VGS =-10V)
● RDS(ON) ＜ 180mΩ (VGS =-10V)
● RDS(ON) ＜ 300mΩ (VGS =-4.5V) +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 D +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 MOSFET Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 G S
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation (Note.1) (Note.2) Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJC TJ Tstg Rating -30 ±25 -1.3 -10 0.5 0.46 250 75 150 -55 to 150 Note.1: RθJA= 250°C/W when mounted on a 0.02 in2 pad of 2oz. copper. Note.2: RθJA= 270°C/W when mounted on a 0.001 in 2 pad of 2oz. copper. Unit V A W ℃/W ℃ 1 SMD Type MOSFET P-Channel MOSFET FDN352AP (KDN352AP)●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Drain-Source Breakd...
