onsemi FDN352AP
This P−Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss is needed in a very small outline surface mount package.| Part No. | FDN352AP |
|---|---|
| Datasheet | FDN352AP Download |
| Manufacturer |  onsemi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● −1.3 A, −30 V RDS(ON) = 180 mW @ VGS = −10 V● −1.1 A, −30 V RDS(ON) = 300 mW @ VGS = −4.5 V
● High Performance Trench Technology for Extremely Low RDS(ON)
● High Power Version of Industry Standard SOT−23 Package. Identical Pin−out to SOT−23 with 30% Higher Power Handling Capability
● This Device is Pb−Free, Halide Free and is RoHS Compliant
APPLICATIONS
● Notebook Computer Power ManagementABSOLUTE MAXIMUM RATINGS
(TA = 25°C, unless otherwise noted) Symbol Parameter Value Unit VDSS Drain−Source Voltage −30 V VGSS Gate−Source Voltage ±25 V ID Drain Current Continuous (Note 1a) −1.3 A Pulsed −10 PD Power Dissipation (Note 1a) for Single Operation (Note 1b) 0.5 W 0.46 TJ, TSTG Operating and Storage Junction Temperature Range −55 to 150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. D G S S...
