FDN359BN Datasheet (PDF) Download
Fairchild Semiconductor
FDN359BN

Overview

This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

  • 2.7 A, 30 V. RDS(ON)= 0.046 Ω @ VGS = 10 V RDS(ON)= 0.060 Ω @ VGS = 4.5 V
  • Very fast switching speed.
  • Low gate charge (5nC typical)
  • High performance version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. DD SuperSOTTM-3 G S