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FDN358P - P-Channel MOSFET

General Description

This P Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • 1.5 A,.
  • 30 V.
  • RDS(ON) = 125 mW @ VGS =.
  • 10 V.
  • RDS(ON) = 200 mW @ VGS =.
  • 4.5 V.
  • Low Gate Charge (4 nC Typical).
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • High Power Version of Industry Standard SOT.
  • 23 Package. Identical Pin.
  • Out to SOT.
  • 23 with 30% Higher Power Handling Capability.
  • This Device is Pb.
  • Free and Halide Free.

📥 Download Datasheet

Datasheet Details

Part number FDN358P
Manufacturer onsemi
File Size 291.31 KB
Description P-Channel MOSFET
Datasheet download datasheet FDN358P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com MOSFET – Single, P-Channel, POWERTRENCH), Logic Level VDSS −30 V RDS(ON) MAX 125 mW @ −10 V 200 mW @ −4.5 V ID MAX −1.5 A FDN358P General Description This P−Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features • −1.5 A, −30 V ♦ RDS(ON) = 125 mW @ VGS = −10 V ♦ RDS(ON) = 200 mW @ VGS = −4.