FDN359AN Overview
This N−Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required.
FDN359AN Key Features
- 2.7 A, 30 V
- RDS(ON) = 0.046 W @ VGS = 10 V
- RDS(ON) = 0.060 W @ VGS = 4.5 V
- Very Fast Switching
- Low Gate Charge (5 nC Typical)
- High Power Version of Industry Standard SOT-23 Package
