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FDN359BN - N-Channel MOSFET

General Description

This N Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain superior switching performance.

Key Features

  • 2.7 A, 30 V.
  • RDS(ON) = 0.046 W @ VGS = 10 V.
  • RDS(ON) = 0.060 W @ VGS = 4.5 V.
  • Very Fast Switching Speed.
  • Low Gate Charge (5 nC Typical).
  • High Performance Version of Industry Standard SOT.
  • 23 Package. Identical Pin Out to SOT.
  • 23 with 30% Higher Power Handling Capability.
  • This Device is Pb.
  • Free and Halide Free.

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Datasheet Details

Part number FDN359BN
Manufacturer onsemi
File Size 293.34 KB
Description N-Channel MOSFET
Datasheet download datasheet FDN359BN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH), Logic Level FDN359BN General Description This N−Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required. Features • 2.7 A, 30 V ♦ RDS(ON) = 0.046 W @ VGS = 10 V ♦ RDS(ON) = 0.060 W @ VGS = 4.5 V • Very Fast Switching Speed • Low Gate Charge (5 nC Typical) • High Performance Version of Industry Standard SOT−23 Package.