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FDN357N - N-Channel MOSFET

Datasheet Summary

Description

SUPERSOTt 3 N

field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance.

Features

  • 1.9 A, 30 V.
  • RDS(ON) = 0.09 W @ VGS = 4.5 V.
  • RDS(ON) = 0.06 W @ VGS = 10 V.
  • Industry Standard Outline SOT.
  • 23 Surface Mount Package Using Proprietary.

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Datasheet Details

Part number FDN357N
Manufacturer ON Semiconductor
File Size 279.88 KB
Description N-Channel MOSFET
Datasheet download datasheet FDN357N Datasheet
Additional preview pages of the FDN357N datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, Logic Level, Enhancement Mode FDN357N General Description SUPERSOTt−3 N−Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in−line power loss are needed in a very small outline surface mount package. Features • 1.9 A, 30 V ♦ RDS(ON) = 0.09 W @ VGS = 4.5 V ♦ RDS(ON) = 0.
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