FDN357N
Description
SUPERSOTt-3 N-Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.
Key Features
- RDS(ON) = 0.09 W @ VGS = 4.5 V
- RDS(ON) = 0.06 W @ VGS = 10 V
- Industry Standard Outline SOT-23 Surface Mount Package Using Proprietary SUPERSOT-3 Design for Superior Thermal and Electrical Capabilities
- High Density Cell Design for Extremely Low RDS(ON)
- Exceptional On-Resistance and Maximum DC Current Capability
- This Device is Pb-Free and is RoHS pliant
