FDN357N Description
SUPERSOTt−3 N−Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. These devices are particularly suited for low voltage applications in notebook puters, portable phones, PCMCIA cards, and other battery powered circuits where fast...
FDN357N Key Features
- 1.9 A, 30 V
- RDS(ON) = 0.09 W @ VGS = 4.5 V
- RDS(ON) = 0.06 W @ VGS = 10 V
- Industry Standard Outline SOT-23 Surface Mount Package Using
- High Density Cell Design for Extremely Low RDS(ON)
- Exceptional On-Resistance and Maximum DC Current Capability
- This Device is Pb-Free and is RoHS pliant