| Part Number | FDP20N50 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
UniFETt MOSFET is onsemi’s high voltage MOSFET family
based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and.
* RDS(on) = 200 mW (Typ.) @ VGS = 10 V, ID = 10 A * Low Gate Charge (Typ. 45.6 nC) * Low Crss (Typ. 27 pF) * 100% Avalanche Tested Applications * LCD/LED/PDP TV * Lighting * Uninterruptible Power Supply * AC *DC Power Supply DATA SHEET VDSS 500 V RDS(on) MAX 230 mW @ 10 V ID MAX 20. |
FDP20N50 Datasheet and Specifications PDF
The FDP20N50 is a N-Channel MOSFET.
| Part Number | FDP20N50 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switchi.
* RDS(on) = 200 mΩ (Typ.) @ VGS = 10 V, ID = 10 A * Low Gate Charge (Typ. 45.6 nC) * Low Crss (Typ. 27 pF) * 100% Avalanche Tested Applications * LCD/LED/PDP TV * Lighting * Uninterruptible Power Supply * AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFE. |
| Part Number | FDP20N50 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Drain Current ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · These dev. S= 0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 10A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 VSD Diode Forward Voltage IF= 20A; VGS= 0 FDP20N50 MI. |