FDPF2710T Datasheet
FDPF2710T Datasheet (onsemi)
onsemi
This N−Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features • RDS.
* RDS(on) = 36.3 mW (Typ.) @ VGS = 10 V, ID = 25 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability
* This is a Pb
*Free Device
Applications
* Consumer Appliances
* Synchronous Rectification
DATA SHEE.
FDPF2710T Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performan.
* RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
* Fast Switching Speed
* Low Gate Charge
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching perf.