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FDPF2710T - MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

High Performance Trench Technology for Extremely Low RDS(on) High Power and

Key Features

  • RDS(on) = 36.3 mΩ ( Typ. )@ VGS = 10 V, ID = 25 A.
  • Fast Switching Speed.
  • Low Gate Charge.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDPF2710T — N-Channel PowerTrench® MOSFET October 2013 FDPF2710T N-Channel PowerTrench® MOSFET 250 V, 25 A, 42.5 mΩ Features • RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A • Fast Switching Speed • Low Gate Charge Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.