FDPF2710T Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS pliant Applications Consumer Appliances Synchronous Rectification D GDS TO-220F Ratings Symbol VDS VGS ID...
FDPF2710T Key Features
- RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- RoHS pliant