FDPF2710T
FDPF2710T is MOSFET manufactured by Fairchild Semiconductor.
Features
- RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
- Fast Switching Speed
- Low Gate Charge
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- Ro HS pliant
Applications
- Consumer Appliances
- Synchronous Rectification
TO-220F
Absolute Maximum Ratings
Symbol
VDS VGS ID
IDM EAS dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Gate-Source voltage
Drain Current Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC...
