FDPF2710T - N-Channel MOSFET

onsemi

General Description

This N Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on

state resistance while maintaining superior switching performance.

Key Features

RDS(on) = 36.3 mW (Typ. ) @ VGS = 10 V, ID = 25 A.
Fast Switching Speed.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability.
This is a Pb.
Free Device.

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FDPF2710T n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDPF2710T
Manufacturer	onsemi
File Size	287.56 KB
Description	N-Channel MOSFET
Datasheet	FDPF2710T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MOSFET – N-Channel, POWERTRENCH) 250 V, 25 A, 42.5 mW FDPF2710T Description This N−Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features • RDS(on) = 36.3 mW (Typ.) @ VGS = 10 V, ID = 25 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • This is a Pb−Free Device Applications • Consumer Appliances • Synchronous Rectification DATA SHEET www.onsemi.com VDS 250 V RDS(on) MAX 42.