| Part Number | FDS6685 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
Features
This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It
has been optimized for power management applications
requiring a wide range of gave dri.
This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It
has been optimized for power management applications
requiring a wide range of gave drive voltage ratings
(4.5V * 25V). * *8.8 A, *30 V RDS(ON) = 20 mΩ @ VGS = *10 V RDS(ON) = 35 mΩ @ VGS = *4.5 . |
FDS6685 Datasheet and Specifications PDF
The FDS6685 is a P-Channel MOSFET.
Key Specifications
| Package | SOIC |
|---|---|
| Mount Type | Surface Mount |
| Height | 1.75 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDS6685 Datasheet |
|---|---|
| Description | P-Channel Logic Level PowerTrenchTM MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior s.
* -8.8 A, -30 V. RDS(ON) = 0.020 Ω @ VGS = -10 V RDS(ON) = 0.035 Ω @ VGS = -4.5 V Extended VGSS range (±25V) for battery applications. Low gate charge (19nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. * * . |