FDS86141 Datasheet and Specifications PDF

„ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A „ High performance trench technology for extremely low rDS(on) „ 100% UIL Tested „ RoHS Compliant This N-.

General Description
* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
* Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A
* High performance trench technology for extremely low rDS(on)
* 100% UIL Tested
* RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trenc.

„ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A „ High performance trench technology for extremely low rDS(on) „ 100% UIL Tested „ RoHS Compliant This N-.

General Description
* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
* Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A
* High performance trench technology for extremely low rDS(on)
* 100% UIL Tested
* RoHS Compliant This N-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench® proc.