FDS86141 Overview
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS pliant This N-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance. 1.8 1 Publication...
FDS86141 Key Features
- Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
- Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A
- High performance trench technology for extremely low rDS(on)
- 100% UIL Tested
- RoHS pliant
