FDS86141 Overview
Key Specifications
Package: SOIC
Mount Type: Surface Mount
Pins: 8
Height: 1.5 mm
Description
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A - Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A - High performance trench technology for extremely low rDS(on) - 100% UIL Tested - RoHS Compliant This N-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.
