Datasheet Summary
FDS86140 N-Channel PowerTrench® MOSFET
March 2011
N-Channel PowerTrench® MOSFET
100 V, 11.2 A, 9.8 mΩ
Features
General Description
- Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A
- Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A
- High performance trench technologh for extremely low rDS(on)
- High power and current handing capability in a widely used surface mount package
- 100% UIL Tested
- RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications
- DC/DC Converters and Off-Line UPS
- Distributed Power Architectures and VRMs
- Primary...