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FDS86141 - MOSFET

General Description

Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s a

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS86141 N-Channel Power Trench® MOSFET May 2015 FDS86141 N-Channel Power Trench® MOSFET 100 V, 7 A, 23 mΩ Features General Description „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A „ High performance trench technology for extremely low rDS(on) „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.