FDT86113LZ Datasheet
FDT86113LZ Datasheet (onsemi)
onsemi
This N−Channel logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on−state resistance and yet maintain superior switching perform.
* Max rDS(on) = 100 mW at VGS = 10 V, ID = 3.3 A
* Max rDS(on) = 145 mW at VGS = 4.5 V, ID = 2.7 A
* High Performance Trench Technology for Extremely Low rDS(on)
* High Power and Current Handling Capability in a Widely Used
Surface Mount Package
* HBM ESD Protection Level > 3 kV Typical (Note 4)
* 1.
FDT86113LZ Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling cap.
General Description
* Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A
* Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.7 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used
surface mount package
* HBM ESD protection level > 3 K.